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Vishay Siliconix
IRFP254PBF ImageView larger image
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See specs for product details.

IRFP254PBF

In Stock 2772 pcs Reference Price(In US Dollars)
1+
$3.26
10+
$2.92
100+
$2.39
500+
$2.04
1000+
$1.72
2000+
$1.64
Manufacturer Part Number:
IRFP254PBF
Manufacturer / Brand
Vishay Siliconix
Part of Description:
MOSFET N-CH 250V 23A TO247-3
Datasheets:
IRFP254PBF(1).pdfIRFP254PBF(2).pdf
Lead Free Status / RoHS Status:
ROHS3 Compliant
Stock Condition:
New original, 2772 pcs Stock Available.
Ship From:
Hong Kong
Shipment Way:
DHL/Fedex/TNT/UPS

Inquiry Online

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Part Number IRFP254PBF
Manufacturer / Brand Vishay Siliconix
Stock Quantity 2772 pcs Stock
Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 250V 23A TO247-3
Lead Free Status / RoHS Status: ROHS3 Compliant
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-247AC
Series -
Rds On (Max) @ Id, Vgs 140mOhm @ 14A, 10V
Power Dissipation (Max) 190W (Tc)
Package / Case TO-247-3
Package Tube
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 2700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 140 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 23A (Tc)
Base Product Number IRFP254

Packaging

We offer the highest quality, most economicallypriced static shield packaging available. With 40% light transparency, itallows for easy identification of IC's (integrated circuits) and PCB's (printedcircuit boards). The extremely durable buried metal contruction gives FaradayCage performance needed to effectively shield these componenets against staticcharge.

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
We can offer worldwide express delivery service, such as DHLor FedEx or TNT or UPS or other forwarder for shipment.

Global Shipment by DHL/FedEx/TNT/UPS

Shipping Fees reference DHL/FedEx
1). You can offer your express delivery account for shipment, ifyou haven’t any express account for shipment, we can offer our account inadvance.
2). Use our account for shipment, Shipment charges(Reference DHL/FedEx, Different Countries has different price.)
Shipment charges: (Reference DHL and FedEX)
Weight(KG): 0.00kg-1.00kg Price(USD$) : USD$60.00
Weight(KG): 1.00kg-2.00kg Price(USD$) : USD$80.00
* The price of cost is reference with DHL/FedEx. The detail charges, please contact us. Different country the express charges are different.



IRFP254PBF Product Details:

"Understanding the IRFP254PBF N-MOSFET Transistor: Applications, Features, and Manufacturing" The IRFP254PBF is a powerful discrete semiconductor product that belongs to the MOSFET's family, specifically for N-MOSFETs. With its TO247AC packaging, industry experts applaud its performance parameters, which include a unipolar transistor with a 250V voltage rating, 23A current handling, and 92A maximum pulsed drain current. The transistor's central performance attribute is its 190W power dissipation rating coupled with an efficiency that stands out even in high-temperature ranges. With such impressive specifications, the IRFP254PBF makes it ideal for various electronics applications. Here are some of the common application scenarios and usage of the product: Applications: - DC/DC converters & power supplies - Motor drivers - Load switches - Solenoid and relay drivers - Welding machines - Battery chargers - LED lighting - Power inverters Features: - Low on-resistance - Fast switching speed - High avalanche ruggedness - Excellent thermal performance - Low leakage current - Solderable leads around 2.3mm - RoHS-compliant The semiconductor's complex manufacturing procedure begins with the chip design phase, which involves building the transistor's critical features and integrated circuits. The chip then undergoes a cutting process that separates it from the wafer, followed by an intense cleaning process, making it free from contaminants. The chip is then subjected to back grinding, which gives the final wafer a flat surface before going through laser processing for drilling contact holes. The chip is then doped with specific materials and exposed to light to customize its electrical performance. The process continues with vapor deposition and etching, which finally leads to packaging and testing the finished transistor. The finished transistor is checked, and various essential component qualities are assessed, including electrical, optical, and thermal performance. In conclusion, the IRFP254PBF's N-MOSFET's superior electrical parameters make it a preferred choice for several electronic devices, industrial, and specific applications. With its comprehensive manufacturing process and packaging, the product guarantees high quality with excellent performance parameters. It is no wonder industry worldwide, from power supplies to pulse width modulators and in many other power switching applications, trust it.

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